IXTH 50P085
IXTT 50P085
Fig. 1. Output Characte ris tics
@ 25 Deg. C
Fig. 2. Exte nded Output Characteristics
@ 25 de g. C
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
V GS = -10V
-9V
-8V
-7V
-6V
-5V
-140
-120
-100
-80
-60
-40
-20
0
V GS = -10V
-9V
-8V
-7V
-6V
-5V
0
-0.5
-1
-1.5
-2
-2.5
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
V D S - Volts
Fig. 3. Output Characte ris tics
@ 125 Deg. C
V D S - Volts
Fig. 4. R DS(on) Norm alize d to I D25 Value vs.
Junction Te m pe rature
-50
-45
-40
V GS = -10V
-9V
-8V
2
1.8
V GS = -10V
-35
1.6
-30
-25
-20
-15
-7V
-6V
1.4
1.2
1
I D = -50A
I D = -25A
-10
-5
0
-5V
0.8
0.6
0
-1
-2
-3
-4
-5
-50
-25
0
25
50
75
100
125
150
2.4
V D S - Volts
Fig. 5. R DS(on) Norm alize d to I D25
Value vs . I D
-55
T J - Degrees Centigrade
Fig. 6. Drain Curre nt vs. Cas e
Te m pe rature
2.2
2
1.8
1.6
1.4
1.2
1
0.8
V GS = -10V
T J = 125oC
T J = 25oC
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
-25
-50
-75
-100
-125
-50
-25
0
25
50
75
100
125
150
? 2005 IXYS All rights reserved
I D - Amperes
T C - Degrees Centigrade
相关PDF资料
IXTT50P10 MOSFET P-CH 100V 50A TO-268
IXTT60N20L2 MOSFET N-CH 200V 60A TO268
IXTT64N25P MOSFET N-CH 250V 64A TO-268
IXTT69N30P MOSFET N-CH 300V 69A TO-268
IXTT74N20P MOSFET N-CH 200V 74A TO-268
IXTT75N10L2 MOSFET N-CH 100V 75A TO268
IXTT75N10 MOSFET N-CH 100V 75A TO-268
IXTT88N30P MOSFET N-CH 300V 88A TO-268
相关代理商/技术参数
IXTT50P10 功能描述:MOSFET -50 Amps -100V 0.055 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT52N30P 功能描述:MOSFET 52 Amps 300V 0.066 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT60N10 功能描述:MOSFET 60 Amps 100 V 0.033 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT60N20L2 功能描述:MOSFET LINEAR L2 SERIES MOSFET 200V 60A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT64N25P 功能描述:MOSFET 64 Amps 250V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT68P20T 功能描述:MOSFET TrenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT69N30P 功能描述:MOSFET 69 Amps 300V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT6N120 功能描述:MOSFET 6 Amps 1200V 2.700 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube